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| FDD6688S May 2004 FDD6688S 30V N-Channel PowerTrench SyncFETTM General Description The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Applications * DC/DC converter * Motor Drives Features * 88 A, 30 V. RDS(ON) = 5.1 m @ VGS = 10 V RDS(ON) = 6.3 m @ VGS = 4.5 V * Low gate charge (31 nC typical) * Fast switching * High performance trench technology for extremely low RDS(ON) D G S D G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V A W 88 100 69 3.1 1.3 -55 to +150 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 C/W Package Marking and Ordering Information Device Marking FDD6688S Device FDD6688S Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6688 Rev C (W) FDD6688S Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions Single Pulse, VDD = 15 V, ID = 21A Min Typ 501 Max Units mJ Drain-Source Avalanche Ratings (Note 2) 21 VGS = 0 V, ID = 1mA 30 30 500 100 1 1.4 -0.3 4.0 4.7 6.0 72 3 A V mV/C A nA V mV/C 5.1 6.3 7.5 Off Characteristics BVDSS BVDSS TJ IDSS IGSS ID = 15mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 1mA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance ID = 15mA, Referenced to 25C VGS = 10 V, ID = 18.5 A VGS = 4.5 V, ID = 16.5 A VGS = 10 V, ID = 18.5 A, TJ=125C VDS = 5 V, ID = 18.5 A m S gFS Dynamic Characteristics Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 3290 900 300 1.6 pF pF pF 23 23 50 103 81 44 ns ns ns ns nC nC nC nC f = 1.0 MHz Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 13 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 13 31 64 58 VDD = 15 V, ID = 18.5 A 31 8 10 Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge FDS6688S Rev C (W) FDD6688S Electrical Characteristics (continued) Symbol VSD trr Qrr Irr TA = 25C unless otherwise noted Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Current Test Conditions VGS = 0 V, IF = 18.5 A, IS = 4.4 A (Note 2) Min Typ 400 28 30 2.1 Max 700 Units mV ns nC A Drain-Source Diode Characteristics and Maximum Ratings diF/dt = 300 A/s Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 2 1in pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDS6688S Rev C (W) FDD6688S Typical Characteristics 100 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 80 ID, DRAIN CURRENT (A) 4.5V 60 4.0V 3.0V 3.5V 2.3 VGS = 3.0V 1.8 40 3.5V 1.3 4.0V 4.5V 20 5.0V 6.0V 10V 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 88A VGS =10V ID = 44A 0.012 0.01 0.008 0.006 0.004 0.002 TA =25oC TA = 125oC 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 100 VDS = 5V 80 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 60 1 25 C o 40 TA = 125 C o -55oC -55oC 0.1 20 25 C 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 o 0.01 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDS6688S Rev C (W) FDD6688S Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 88A 8 VDS = 10V 20V 6 15V 4 CAPACITANCE (pF) 5000 f = 1MHz VGS = 0 V 4000 3000 Ciss 2000 Coss 1000 Crss 2 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1 VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25oC 100us 1ms 10ms 100ms 1s 10s DC 40 SINGLE PULSE RJA = 96C/W TA = 25C 30 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 96 C/W 0.1 0.1 0.05 P(pk 0.01 0.02 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS6688S Rev C (W) FDS6688S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6688S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 TA = 100oC TA = 125oC CURRENT : 0.8A/div TA = 25oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDD6688S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6688). CURRENT : 0.8A/div TIME : 12.5ns/div Figure 13. Non-SyncFET (FDD6688) body diode reverse recovery characteristic. FDS6688S Rev C (W) FDS6688S VDS VGS RGE VGS 0V tp L tP DUT IAS 0.01 + VDD IAS BVDSS VDS VDD vary tP to obtain required peak IAS tAV Figure 15. Unclamped Inductive Load Test Circuit Drain Current Same type as Figure 16. Unclamped Inductive Waveforms + 10V 50k 10F 1F - + DUT VDD 10V VGS QGS Q QGD VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON td(ON) VDS + DUT VDD 0V 10% 90% 50% 10% 50% 10% 90% VDS VGS RGEN VGSPulse Width 1s RL tr tOFF td(OFF tf ) 90% VGS 0V Duty Cycle 0.1% Pulse Width Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms FDD6688S Rev. C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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